??/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
スポンサーリンク
概要
著者
-
Takagi Hideki
National Inst. Of Advanced Industrial Sci. And Technol.
-
Yamada Hisashi
Sumitomo Chemical
-
Fukuhara Noboru
Sumitomo Chemical
-
Hata Masahiko
Sumitomo Chemical
-
Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
-
Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
-
Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
-
Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Zhang Rui
Department Of Biochemistry And Molecular Biology Fourth Military Medical University
-
Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Kim Sanghyeon
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
-
MAEDA Tatsuro
National Institute of Advanced Industrial Science and Technology
-
ICHIKAWA Osamu
Sumitomo Chemical Co., Ltd.
-
Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
関連論文
- Partial vs Full Coverage for Tandem Lesions in Culprit Vessel During Primary Coronary Intervention in Patients With Acute ST-Elevation Myocardial Infarction : The PERFECT-AMI Study
- Micro Gas Preconcentrator Made of a Film of Single-Walled Carbon Nanotubes
- Importance of the Retro-Mammary Space as a Route of Breast Cancer Metastasis
- Histologic Examination of Two Cases of Cystosarcoma Phyllodes with Pulmonary Metastases
- Identification of Pathologic Parathyroid Glands in Patients with Primary Hyperparathyroidism
- Pharmacokinetics of Indomethacin, a Metabolite of Acemetacin, Following a Single dose and Multiple doses Administered as Acemetacin Sustained-Release Tablets in Healthy Male Volunteers
- Possible role for a polysaccharide antigen shared between Streptococcus pyogenes and S. mutans in the pathogenesis of poststreptococcal glomerulonephritis
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Caffeic Acid Protects Hydrogen Peroxide Induced Cell Damage in WI-38 Human Lung Fibroblast Cells(Molecular and Cell Biology)
- Protective Effect of Triphlorethol-A from Ecklonia cava against Ionizing Radiation in vitro
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Developmental Characteristics of Mice Lacking the DNA Excision Repair Gene XPG
- Neuronal Migration and Neuronal Migration Disorder in Cerebral Cortex
- Increased Serum Glycated Albumin Level is Associated With the Presence and Severity of Coronary Artery Disease in Type 2 Diabetic Patients
- Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
- GaN-Based High-Speed Intersubband Optical Switches
- Family and segregation studies : 411 Chinese children with primary nocturnal enuresis
- Ultrathin body InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors with InP passivation layers on Si substrates fabricated by direct wafer bonding
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Gene Polymorphisms of the Renin-Angiotensin-Aldosterone System and Angiotensin II Type 1-Receptor Activating Antibodies in Renal Rejection
- Differential Control of Systolic and Diastolic Blood Pressure : Factors Associated With Lack of Blood Pressure Control in Rural Community of Liaoning Province, China
- The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors
- Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- A genetic mouse model carrying the nonfunctional xeroderma pigmentosum group G gene
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
- High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
- Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Full Ballistic Transport
- Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers
- Electrostatic Imprint Process for Glass
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Diffraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol–Gel Silica Film by Laser Irradiation
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- New Electrodeless Light Source Intensified by Electron Cyclotron Resonance Heating
- Influences of Supplementary Dietary Tungsten on Methionine Metabolism in Rabbits Fed a Low-Cholesterol plus Methionine Diet
- GaInAsP/InP Directional Coupler Loaded with Grating for Optically-Controlled Switching(Special Issue on Recent Progress of Integrated Photonic Devices)
- Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
- Tolerance of two invasive thistles to repeated disturbance
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Size and Shape Transformation of TiO_2 Nanoparticles by Irradiation of 308-nm Laser Beam
- A Uremic Solute, P-Cresol, Inhibits the Proliferation of Endothelial Progenitor Cells via the p38 Pathway
- ??/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
- Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO_2/Si Metal-Oxide-Semiconductor Field-Effect Transistors
- Analysis of Stress in Plasma Enhanced Chemical Vapor Deposition Silicon Nitride Film Irradiated with Ultraviolet Light
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Side population cells isolated from human osteosarcoma are enriched with tumor-initiating cells
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- High-efficient Chip to Wafer Self-alignment and Bonding for Flexible and Size-free MEMS-IC Integration
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
- Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- Numerical and Experimental Analysis of Intermittent Line-and-Space Patterns in Thermal Nanoimprint
- Protein-energy wasting and peritoneal function in elderly peritoneal dialysis patients
- Warming leads to divergent responses but similarly improved performance of two invasive thistles
- Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
- In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Reduction in Interface Trap Density of Al
- Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
- InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
- AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
- Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
- Characterization of Monolayer Oxide Formation Processes on High-Index Si Surfaces by Photoelectron Spectroscopy with Synchrotron Radiation
- Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Novel disposable flexible bioreactor for Escherichia coli culture in orbital shaking incubator(MICROBIAL PHYSIOLOGY AND BIOTECHNOLOGY)
- Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
- Elevated Lipoprotein-Associated Phospholipase A2 Is Associated with Progression of Nonculprit Lesions after Percutaneous Coronary Intervention