Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Itoh H

  Semiconductor Academic Research Center

• SHIMOGAKI Yukihiro

  Department of Materials Engineering, The University of Tokyo

• SUGIYAMA Masakazu

  Department of Electronic Engineering, School of Engineering, University of Tokyo

• Itoh Hitoshi

  Semiconductor Academic Research Center

• Sugiyama Masaaki

  R & D Laboratories-i Central R & D Bureau Nippon Steel Cotporation

• Sugiyama Masaaki

  Advanced Materials & Technology Research Laboratories Nippon Steel Corporation

• Sugiyama M

  Department Of Electric Engineering And Information Systems School Of Engineering The University Of T

• Sugiyama Munehiro

  Ntt Interdisciplinary Research Laboratories

• KOMIYAMA Hiroshi

  Department of Chemical System Engineering, The University of Tokyo

• AOYAMA Jyun-ichi

  Semiconductor Academic Research Center

• Sugiyama M

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Komiyama H

  Department Of Chemical System Engineering School Of Engineering University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Shimogaki Y

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

関連論文

• Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
• Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
• Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
• Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
• Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
• Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
• Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
• Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition
• Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
• Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Effect of Partial Pressure of TiCl_4 and NH_3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
• Anomaly in the Infrared Active Phonon Modes and Its Relationship to the Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Compound
• Anomaly of Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Solid Solution and Its Relation to Structural Change
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• GaN-Based High-Speed Intersubband Optical Switches
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Annealing Effects on (NH_4)_2S_x-Treated GaAs(001) and InP(001) Surfaces
• Surface Protrusions of Chemical Vapor Deposited TiN Films Caused by Cu Contamination of Silicon Substrates
• Interaction between Substitutional and Interstitial Elements in α iron Studied by First-principles Calculation
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Diffiraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol-Gel Silica Film by Laser Irradiation
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
• Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
• GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Microscopic Approach to Shock Waves in Crystal Solids. I
• Statistical-Mechanical Study of Ultrasonic Waves in a Crystal Lattice
• Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
• Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Abnormal αto γ Transformation Behavior of Steels with a Martensite and Bainite Microstructure at a Slow Reheating Rate
• Precipitation and Phase Transformation of Copper Particles in Low Alloy Ferritic and Martensitic Steels
• Kinetic Study on Oxidation of Si(111) Surfaces using H_2O
• Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
• Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
• Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
• Phytoplankton Decomposition Process (PDP) Model Dealing with Carbon and Nitrogen Budget on Particulate Organic Matter
• High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
• Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
• Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
• The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
• Decomposition of Phytoplankton in Seawater. Part 1: Kinetic Analysis of the Effect of Organic Matter Concentration
• Characterization of Amorphous Carbon Films Prepared by Photo-Enhanced Chemical Vapor Deposition at Low Temperatures
• Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
• Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl_4 and NH_3 by Introducing Ar Purge Time
• Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
• Microstructure of a Superconducting Compound La-Sr-Cu-O at Liquid Helium Temperature
• Phase Transformation in the Superconductor Ba-Y-Cu-O and La-Sr-Cu-O Compounds
• Role of TiAl_3 Fine Precipitate in Nucleation of the Primary Al Dendrite Phase during Solidification in Hot-Dip Zn-11%Al-3%Mg-0.2%Si Coated Steel Sheet
• Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
• Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
• Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
• Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
• Synthesis of Nanostructured Diamond via Controlled Surface Pretreatment in Hexane Medium
• Contribution of Dielectric Constant to Change in Temperature Coefficient of Resonant Frequency in (Ba_Sr_x)(Mg_Ta_)O_3 Compounds
• Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
• Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion : Surfaces, Interfaces, and Films
• Application of nano-diffraction to local atomic distribution function analysis of amorphous materials
• Size Effect of Copper Precipitation Particles on Electrochemical Nanoscopic Galvanic Behavior in Cu-Added Ultra Low Carbon Steel
• Development of in situ observation technique using scanning ion microscopy and demonstration of Mn depletion effect on intragranular ferrite transformation in low-alloy steel
• A review of focused ion beam technology and its applications in transmission electron microscopy
• Microstructural Evolution during Greep Test in 9Cr-2W-V-Ta Steels and 9Cr-1Mo-V-Nb Steels
• 178 HUMAN OSTEOBLAST DIFFERENTIATION IS EXPEDITED IN CULTURE IN A MAGNETIC FIELD
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency

もっと見る 閉じる

スポンサーリンク