GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
スポンサーリンク
概要
著者
-
Sugiyama M
Department Of Electric Engineering And Information Systems School Of Engineering The University Of T
-
Sugiyama Munehiro
Ntt Interdisciplinary Research Laboratories
-
Shioda Tomonari
Research Center For Advanced Science And Technology The University Of Tokyo
関連論文
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
- Anomaly in the Infrared Active Phonon Modes and Its Relationship to the Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Compound
- GaN-Based High-Speed Intersubband Optical Switches
- Annealing Effects on (NH_4)_2S_x-Treated GaAs(001) and InP(001) Surfaces
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Microscopic Approach to Shock Waves in Crystal Solids. I
- Statistical-Mechanical Study of Ultrasonic Waves in a Crystal Lattice
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Microstructure of a Superconducting Compound La-Sr-Cu-O at Liquid Helium Temperature
- Phase Transformation in the Superconductor Ba-Y-Cu-O and La-Sr-Cu-O Compounds
- GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model