Annealing Effects on (NH_4)_2S_x-Treated GaAs(001) and InP(001) Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-12-01
著者
-
OSHIMA Masaharu
NTT Interdisciplinary Research Laboratories
-
Maeyama Satoshi
Ntt Interdisciplinary Research Laboratories
-
YABUMOTO Norikuni
NTT Interdisciplinary Labs.
-
Yabumoto Norikuni
Ntt Interdisciplinary Research Laboratories
-
Sugiyama Munehiro
Ntt Interdisciplinary Research Laboratories
関連論文
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- A Photoemission Study of Al and Au Overlayers on Se/GaAs(100)
- Selective, Maskless Growth of InSb on Selenium-Treated GaAs by Molecular Beam Epitaxy
- Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
- Se Segregation and Chemical Bonding in Pd/Se/GaAs
- Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
- Photoelectron Spectroscopy of EuBa_2Cu_3O_ Thin Film Surfaces Treated by an Electron Cyclotron Resonance Oxygen Ion Beam
- Water-Immersion-Induced Surface Reactiorns of EuBa_2Cu_3O_y Thin Films
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
- GaN-Based High-Speed Intersubband Optical Switches
- Annealing Effects on (NH_4)_2S_x-Treated GaAs(001) and InP(001) Surfaces
- LSI製造プロセス雰囲気中不純物の微量分析〔英文〕 (電子材料技術の新展開)
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- GaSb-Growth Study by Realtime Crystal-Growth Analysis Systemu Using Synchrotron Radiation Photoelectron Spectroscopy
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation