Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
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概要
- 論文の詳細を見る
The defects induced by through-oxide implantation of arsenic into silicon have been studied using thermal desorption spectroscopy (TDS) after hydrogen adsorption on the defects. TDS peaks observed at 350° C and at 540° C are assigned to the desorption of hydrogen when divacancies are recovered and when the recrystallization takes place. This paper confirms that TDS is a useful tool for investigating the annealing behavior of implanted defects.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
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SAITO Kazuyuki
the University of Aizu
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HOMMA Yoshikazu
NTT Interdisciplinary Research Laboratories
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YABUMOTO Norikuni
NTT Interdisciplinary Labs.
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Sato Yoshiyuki
Ntt Laboratories
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Yabumoto Norikuni
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Homma Yoshikazu
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Saito Kazuyuki
The University of Aizu, Ikki-machi, Aizu-Wakamatsu 965-80, Japan
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