Stability of Relative Sensitivity Factors in Secondary Ion Mass Spectrometry
スポンサーリンク
概要
- 論文の詳細を見る
Relative sensitivity factors (RSFs) in secondary ion mass spectrometry are evaluated from the viewpoint of long term stability using RSFs in semiconductor materials obtained through routine analysis over five years. The variation of RSFs is within ±50% for many kinds of ions in GaAs, InP, and Si. The difference in the RSFs measured by two magnetic sector type instruments with identical mass spectrometers is within the RSF variation for each instrument. These results support the idea that the RSF is transferrable between SIMS instruments of the same type, and quantitative analysis with a deviation of ±50% can be performed using a database of instrument-dependent RSFs.
- 日本質量分析学会の論文
著者
-
HOMMA Yoshikazu
NTT Interdisciplinary Research Laboratories
-
YAMAWAKI Masataka
NTT Interdisciplinary Research Laboratories
-
IGO Azusa
NTT Advanced Technology
-
OCHIAI Shota
NTT Advanced Technology
関連論文
- Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
- Stability of Relative Sensitivity Factors in Secondary Ion Mass Spectrometry
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation