Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• Abe Tomoki

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Sato Yasuhiko

  Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation

• Arai E

  Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology

• Arai E

  Nagoya Inst. Technol. Nagoya Jpn

• Arai E

  Japan Oil Gas And Metals National Corp. Kawasaki‐shi Jpn

• Matsumoto S

  Faculty Of Science And Technology Keio University

• Matsumoto Satoru

  Department Of Electronics And Electrical Engineering Keio University

• SHIMIZU Takashi

  Faculty of Science and Technology, Keio University

• TAKAGI Toshio

  Faculty of Science and Technology, Keio University

• MATSUMOTO Satoru

  Faculty of Science and Technology, Keio University

• SATO Yoshiyuki

  NTT LSI Laboratories

• ARAI Eisuke

  Nagoya Institute of Technology

• ABE Takao

  SEH R&D Center, Shin-Etsu Handotai Co., Ltd.

• Takagi Toshio

  Faculty Of Science And Technology Keio University

• Abe T

  Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.

• Abe Takao

  Shin-etsu Handotai

• Abe Takao

  Shin-etsu Handotai Company

• Abe Takao

  Seh R&d Center Shin-etsu Handotai Co. Ltd.

• Sato Y

  Nagaoka Univ. Technol. Nagaoka Jpn

• Shimizu T

  Univ. Occupational And Environmental Health Jpn

• Sato Yuzuru

  Seiko Epson Corp. Research And Development Div.

• Sato Y

  Department Of Metallurgy Graduate School Of Engineering Tohoku University

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• Sato Y

  Ntt Microsystem Integration Laboratories

• Shimizu T

  Faculty Of Engineering Chiba University

• Abe T

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Takagi T

  Faculty Of Science And Technology Keio University

• Matsumoto S

  Ntt Telecommunications Energy Laboratories

• Shimizu T

  Chiba Univ. Chiba Jpn

• Takagi Toru

  Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• Matsumoto Satoru

  Faculty Of Science And Technology Keio University

• Sato Yoshiyuki

  Ntt Laboratories

• Shimizu Takashi

  Faculty Of Engineering Shizuoka University

• Shimizu Takashi

  Faculty Of Engineering Saitama University

関連論文

• Femtosecond Optical Pulse Compressor Using CS_2 Liquid-Core Fiber with Negative Delayed Nonlinear Response
• Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS_2 Using a Femtosecond Interferometer
• Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
• Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
• Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
• Control of Surface Recombination of Si Wafers by an External Electrode
• Configuration of a Manufacturing Line for Mixed Production of Ultra-Short TAT LSIs and Low-Cost LSIs
• Efficient and Long-Lived Green Light-Emitting Diodes Based on ZnSSe:Te Active Layer
• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
• Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy
• Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^Silicon/Natural Silicon Heterostructures
• Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
• Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
• Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
• Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current
• Determination of the Piezoelectric Coefficient of Monolayers on Water Surface by Maxwell-Displacement-Current Measurement
• One Method of Calculating the Flow around the Guide Vanes of Water Turbine (the Journal and the Transactions of the Japan Society of Mechanical Engineers)
• One Method of Calculating the Flow around the Guide Vanes of Water Turbine
• A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
• Investigation on the Fully-and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications
• Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power ICs
• Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
• Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation
• Switching Characteristics of a Thin Film SOI Power MOSFET
• A Study on Suction Gas Heating in a Rolling Piston Rotary Compressor
• Measurements of Impurity Diffusion Coefficients in Ionic Melts with High Accuracy under Microgravity (特集 MSL-1(3))
• Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
• Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
• Chemical State of Phosphorus at the Silicon Surface
• Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
• Zn-Related Donor-Acceptor Pair Emission in CuAlSe_2 Epitaxial Layers
• Preparation and Characterization of Cu(Al, Ga)(S, Se)_2 Penternary Alloys
• 2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Photoreflectance Characterization of CuAlSe_2 Heteroepitaxial Layers Grown by Metalorganic Chemical Vapor Deposition
• Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe_2 Epitaxial Films
• Photoreflectance and Photoluminescence Studies of CuAl_xGa_Se_2 Alloys
• Photoreflectance Study of CuAlSe_2 Heteroepitaxial Layers
• A New Stacked-Mask Process Utilizing Spun-on Carbon Film for Sub-130-nm Etching
• Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
• Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
• Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
• Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
• Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
• The Nature of Nitrogen-Oxygen Complexes in Silicon
• Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
• Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
• Single-Beam Overwrite with a New Erase Mode of In_3 SbTe_2 Phase-Change Optical Disks : Media
• Single-Beam Overwrite with a New Erase Mode of In_3SbTe_2 Phase-Change Optical Disks
• Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
• 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
• Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
• Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
• Crystallizing Mechanism and Recording Properties of In_3SbTe_2 Phase-Change Optical Disks
• Brillouin Spectra and Structural Relaxation in ZnCl_2-KCl Binary Melts
• 2.5 Inch Flat-Type Phase-Change Optical Disk Drive
• Magneto-Optical Study of Reduced Deimensionality and Quantum Confinement in CdTe/MnTe Multiple Quantum Wells
• Growth and Magneto-Optic Properties of CdTe/Cd_Mn_xTe Multiple Quantum Wells
• Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE Grown p-Type ZnMgSSe
• Shallow-Deep Transition of Nitrgen Acceptor in Blue Semiconductor Laser Material ZnMgSSe
• Newly Packaged 50-μm-Spaced 8-Element Laser Diode Array with a Thermoelectric Cooler
• Theoretical and Experimental Evaluation of the Effect of Adding a Heat-Bypass Structure to a Laser Diode Array
• Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers
• Improvement in Lasing Properties of an Integrated flying Optical Head with a Diamond-Film-Coated Slider : Head Technology
• Improvement in Lasing Properties of an Integrated Flying Optical Head with a Diamond-Film-Coated Slider
• Surface Impurities Encapsulated by Silicon Wafer Bonding
• Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures
• Use of Tetraethylgermane in ArF Excimer Laser Chemical Vapor Deposition of Amorphous Silicon-Germanium Films
• Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe_2/CuAlSe_2 Heterostructure
• Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO_2 Films into Si Substrates
• Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
• Search for Midgap Levels in 3C-SiC Grown on Si Substrates
• Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
• Chemical Vapor Deposition of Cu Film on SiO_2 Using Cyclopentadienylcoppertriethylphosphine
• Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
• Mathematical Model of Vane Compressors for Computer Simulation of Automotive Air Conditioning Cycle
• Influence of Clealance Volume on the Performance of the Rolling Piston Type Rotary Compressor
• Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
• Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
• Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
• An On-Line Scheduler for ASIC Manufacturing Line Management
• A Flexible and Low-Cost ASIC Line Management Technology Taking Operator's Skill-Level as a Scheduling-Factor into Consideration
• A Scalable and Flexible CIM System with Precise and Quick Scheduler for ASIC
• The Mechanism at Work in 40 MHz Discharge SiH_4/NH_3/N_2 Plasma Chemical Vapor Deposition of SIN_x Films at Very High Rates
• Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition
• Time Domain Spectroscopy for Electrical Properties of a Slightly Reduced Rutile Crystal
• Electron Wave Reflection by Multiquantum Barrier
• Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)
• Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)
• Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
• The Japanese Adaptation of the STAI Form Y in Japanese Working Adults-The Presence or Absence of Anxiety-
• Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
• Effect of Boron on Solid Phase Epitaxy of Ge on Si(111) Surface
• Refractive Index of Ga_In_xAs Prepared by Vapor-Phase Epitaxy
• First-Principles Calculation for the Polarity During ZnO Crystals Grown on the C-Terminated 6H–SiC($000\bar{1}$) Surface
• Polarity Control of ZnO on N-Terminated GaN($000\bar{1}$) Surfaces
• High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates
• An Intracellular Fragment of Osteoactivin Formed by Ectodomain Shedding Translocated to the Nucleoplasm and Bound to RNA Binding Proteins
• Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate

もっと見る 閉じる

スポンサーリンク