Sato Yuzuru | Seiko Epson Corp. Research And Development Div.

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著作論文

Femtosecond Optical Pulse Compressor Using CS_2 Liquid-Core Fiber with Negative Delayed Nonlinear Response
Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS_2 Using a Femtosecond Interferometer
Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
Helical Pitches and Tilt Angles in Room Temperature Ferroelectric Chiral Smectic C Liquid Crystals, MORA n and MBRA n
Magnetic Field Effects on Preparing Thin Homogeneous Ferroelectric Smectic Cells for Electro-Optical Microsecond Switches
Anomalous Electric Field Dependence of Helical Pitches in Ferroelectric Sm C : at Temperatures Close to the Phase Transition to Sm A
Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current
Determination of the Piezoelectric Coefficient of Monolayers on Water Surface by Maxwell-Displacement-Current Measurement
Measurements of Impurity Diffusion Coefficients in Ionic Melts with High Accuracy under Microgravity (特集 MSL-1(3))
Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
Single-Beam Overwrite with a New Erase Mode of In_3 SbTe_2 Phase-Change Optical Disks : Media
Single-Beam Overwrite with a New Erase Mode of In_3SbTe_2 Phase-Change Optical Disks
Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
Crystallizing Mechanism and Recording Properties of In_3SbTe_2 Phase-Change Optical Disks
Brillouin Spectra and Structural Relaxation in ZnCl_2-KCl Binary Melts
2.5 Inch Flat-Type Phase-Change Optical Disk Drive
High Quality Ferroelectric Liquid Crystal Display with Quasi-Bookshelf Layer Structure
Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors

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