Kosugi Toshihiko | Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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概要
関連著者
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Kosugi Toshihiko
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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KOSUGI Toshihiko
NTT Wireless System Laboratories
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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AIHARA Ryuzo
Eiko Engineering Co.Ltd.
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KOSUGI Toshihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Namba S
Faculty Of Engineering Osaka University
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Namba S
Inst. Physical And Chemical Research Wako
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Namba S
Osaka Univ. Osaka
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GAMO Kenji
Research Center for Extereme Materials, Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Namba Susumu
Frontier Research Program Riken
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土屋 敏章
島根大学 総合理工学部
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NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Sato Yasuhiko
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsuchiya T
Department Of Electronics Doshisha University
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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NAMBA Susumu
Research Center for Extereme Materials, Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Sato Y
Nagaoka Univ. Technol. Nagaoka Jpn
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Sato Yuzuru
Seiko Epson Corp. Research And Development Div.
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Sato Y
Department Of Metallurgy Graduate School Of Engineering Tohoku University
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YAMASHIRO Tomoki
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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MIMURA Ryou
JEOL Ltd
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AIHARA Ryuzo
JEOL Ltd
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Sato Y
Ntt Microsystem Integration Laboratories
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SATO Yasuhiro
NTT System Electronics Laboratories
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TSUCHIYA Toshiaki
Department of Electronic and Control Systems Engineering
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ISHII Hiromu
NTT System Electronics Laboratories
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Mimura R
Jeol Ltd
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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Gamo K
Osaka Univ. Osaka
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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KOSUGI Toshihiro
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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AIHARA Ryuzo
Eico Engineering Co. Lid.
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Xu Zheng
Faculty of Engineering Science, Osaka University
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KOSUGI Toshihiko
Faculty of Engineering Science, Osaka University
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Yoshizawa T
Graduate School Of Science And Engineering University Of Toyama
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KADO Yuichi
NTT System Electronics Laboratories
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Xu Z
Saga Univ. Saga
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Gamo Kenji
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Kado Yuichi
Ntt Microsystem Integration Laboratories
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Kado Yuichi
Ntt Microsystem Integration Laboratories Ntt Corporation
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IWASE Hiroaki
Department of Gastroenterology, Nagoya National Hospital
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Iwase Hiroaki
Department Of Electrical Engineering Faculty Of Engineering Science 0saka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Xu Zheng
Institute Of Optoelectronic Technology Northern Jiaotong University
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Yamashiro Tomoki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
著作論文
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Ion-Beam-Assisted Etching in Ga^+/GaAs/Cl_2 System