300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• 土屋 敏章

  島根大学 総合理工学部

• Sato Yasuhiko

  Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation

• Tsuchiya T

  Department Of Electronics Doshisha University

• Sato Y

  Nagaoka Univ. Technol. Nagaoka Jpn

• Sato Yuzuru

  Seiko Epson Corp. Research And Development Div.

• Sato Y

  Department Of Metallurgy Graduate School Of Engineering Tohoku University

• Kosugi Toshihiko

  Department Of Electric Engineering Faculty Of Engineering Science Osaka University

• Sato Y

  Ntt Microsystem Integration Laboratories

• SATO Yasuhiro

  NTT System Electronics Laboratories

• KOSUGI Toshihiko

  NTT Wireless System Laboratories

• TSUCHIYA Toshiaki

  Department of Electronic and Control Systems Engineering

• ISHII Hiromu

  NTT System Electronics Laboratories

• KADO Yuichi

  NTT System Electronics Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories Ntt Corporation

• Ishii H

  Sci. Univ. Tokyo Chiba‐ken Jpn

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