Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• 土屋 敏章

  島根大学 総合理工学部

• KADO Yuichi

  NTT Microsystem Integration Laboratories, NTT Corporation

• TSUCHIYA Toshiaki

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Sato Y

  Ntt Microsystem Integration Laboratories

• SATO Yasuhiro

  NTT Microsystem Integration Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories Ntt Corporation

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