3-Gb/s CMOS 1:4 MUX and DEMUX ICs

スポンサーリンク

概要

• 論文の詳細を見る

• We have developed a design technique for static logic circuits. Using this technique, we designed 1/2 divider-type 1:4 demultiplexer (DEMUX) and 2:1 selector-type 4:1 multiplexer (MUX) circuits, each of which is a key component in high-speed data multiplexing and demultiplexing. These circuits consist of double rail flip-flops (DR F/F). These flip-flops have a smaller mean internal capacitance than single rail flip-flops, making them suitable for high-speed operation. The DR F/F has a symmetric structure, so the double rail toggle flip-flop can put out an exactly balanced CK/CKN signal, which boosts the speed of the data flip-flops. The double rail structure enables 30% faster operation but consumes only 17% more power (per GHz) than a single rail circuit. In addition, our 0.25-μm process technology provides a 70% higher frequency operation than 0.5-μm process technology. At the supply voltage of 2. 2 V, the DEMUX circuit and the MUX circuit operate at 4.55 GHz and 2.98 GHz, respectively. In addition, the 0.25-μm DEMUX circuit and the MUX circuit respectively consume 6.0 mW/GHz and 13.7 mW/GHz (@1.3 V), which are only 12% of the power consumed by 3.3-V 0.5-μm circuits. Because of its high-speed and low-power characteristics, our design technique will greatly contribute to the progress of large-scale high-speed telecommunication systems.

• 社団法人電子情報通信学会の論文
• 1995-12-25

著者

• Ohtomo Y

  Ntt System Electronics Lab. Atsugi‐shi Jpn

• Ohtomo Yusuke

  Ntt System Electronics Laboratories

• KADO Yuichi

  NTT Microsystem Integration Laboratories, NTT Corporation

• Kado Yuichi

  NTT LSI Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories Ntt Corporation

• Ino Masayuki

  Ntt Electronics Corp.

• Ino Masayuki

  Ntt Lsi Laboratories

• Yasuda S

  Renesas Device Design Itami‐shi Japan

• OHTOMO Yusuke

  NTT LSI Laboratories

• YASUDA Sadayuki

  NTT LSI Laboratories

• TSUCHIYA Toshiaki

  NTT LSI Laboratories

• Tsuchiya T

  Ntt Corp. Musashino‐shi Jpn

関連論文

• A1-V Cyclic A/D Converter Using FD-SOI Sample/Hold Circuits for Sensor Networks(Analog, Low-Power LSI and Low-Power IP)
• A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
• An Effective Routing Methodology for Gb/s LSIs Using Deep-Submicron Technology
• A Fully Depleted CMOS/SIMOX LSI Scheme Using a LVTTL-Compatible and Over-2,000-V ESD-Hardness I/O Circuit for Reduction in Active and Static Power Consumption (Special Issue on SOI Devices and Their Process Technologies)
• A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
• An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors
• Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
• 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
• A 40-Gb/s 8×8 ATM Switch LSI Using 0.25-μm CMOS/SIMOX(Special Issue on Multimedia, Network, and DRAM LSIs)
• A High-Performance Multicast Switch and Its Feasibility Study
• A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit (Special Issue on Ultra-High-Speed LSIs)
• A 4:1 MUX Circuit Using 1/4 Micron CMOS/SIMOX for High-Speed and Low-Power Applications
• 3-Gb/s CMOS 1:4 MUX and DEMUX ICs
• A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit
• LSI Applications of 0.25-μm CMOS/SIMOX Technology
• 8-mW,1-V,100-Msample/s,6-bit A/D Converter Using a Latched Comparator Operating in the Triode Region
• A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• A 4:1 MUX Circuit Using 1/4 Micron CMOS/SIMOX for High-Speed and Low-Power Applications

もっと見る 閉じる

スポンサーリンク