Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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TSUCHIYA Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University
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Yoshida Toshiyuki
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Sasaki Nobuo
Silicon Technologies Labs Fujitsu Laboratories Ltd.
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EBIKO Toshiki
Silicon Technologies Labs, Fujitsu Laboratories LTD.
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TAKEI Michiko
Silicon Technologies Labs, Fujitsu Laboratories LTD.
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- Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors