Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure

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概要

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• Surface state density distributions of p-InP surfaces before and after nitrogen (N₂)-radical exposure were characterized using an air-gap capacitance--voltage ($C$--$V$) technique. Before N₂-radical exposure, a discrete level with a high density and extremely slow electron capture rate existed, causing strong Fermi level pinning. The peak density and full width at half maximum of this level were estimated. After N₂-radical exposure, the density of the discrete level decreased to $(5{\mbox{--}}6)\times 10^{12}$ cm-2 eV-1. On the other hand, the continuous level became to be observed. Furthermore, the electron capture rate of the discrete level became larger after the N₂-radical exposure.

• 2011-07-25

著者

• Yoshida Toshiyuki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Hashizume Tamotsu

  Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan

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• FOREWORD
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

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