Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
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概要
- 論文の詳細を見る
Pt Schottky barriers were formed on InP-based materials by a novel in-situ electrochemical process. The electrical characteristics, surfaces and interfaces of the Schottky diodes were investigated by current-voltage (I-V), capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and atomic force microscopy (AFM) measurements. The mechanism for increasing the Schottky barrier heights (SBH) was explained in terms of possible ordered interface formation from the viewpoint of the disorder induced gap state (DIGS) model.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Uno Shouichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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