Uno Shouichi | Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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概要
- UNO Shouichiの詳細を見る
- 同名の論文著者
- Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Informationの論文著者
関連著者
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Uno Shouichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Wu Nan-jian
The University Of Electro-communications
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HASEGAWA Hideki
Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu
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KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
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UNO Shouichi
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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WU Nan-Jian
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
著作論文
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
- Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism