Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Uno Shouichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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