Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on(001)InP Surfaces and Their Photoluminescence Characterizations
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
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