Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
スポンサーリンク
概要
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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AMEMIYA Yoshihito
Department of Electrical Engineering, Hokkaido University
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Wu Nan-jian
The University Of Electro-communications
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Wu Nan-jian
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Amemiya Yoshihito
Department Of Electrical Engineering Hokkaido University:research Center For Interface Quantum Elect
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Amemiya Yoshihito
Ntt Lsi Laboratories
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Amemiya Yoshihito
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Amemiya Y
Department Of Electrical Engineering Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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