More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-04-15
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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Kodama Satoshi
Research Institute Of Innovative Technology For The Earth
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Kodama Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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Koyanagi Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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