Kodama Satoshi | Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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概要
- 同名の論文著者
- Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido の論文著者
関連著者
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Kodama Satoshi
Research Institute Of Innovative Technology For The Earth
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Kodama Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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YAMAMOTO Shin
Research Center for Compact Chemical Process, National Institute of Advanced Industrial Science and
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YAO SHUILIANG
Research Institute of Innovative Technology for the Earth
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Yao Shuiliang
Chemical Research Group Research Institute Of Innovative Technology For The Earth (rite)
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MINE Chieko
Research Institute of Innovative Technology for the Earth
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FUJIOKA Yuichi
Research Institute of Innovative Technology for the Earth
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Yamamoto Shin
Research Center For Compact Chemical Process National Institute Of Advanced Industrial Science And T
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Koyanagi Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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IKEYA Kengo
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Ikeya Kengo
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
著作論文
- Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
- Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
- More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
- Experimental Investigation of Carbon Oxidization
- Oxidation Mechanism of Diesel Particulate Matter in Plasma Discharges