Koyanagi S | Hokkaido Univ. Sapporo Jpn

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著作論文

Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
High-Speed Response of Uni-Traveling-Carrier Photodiodes
Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts

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