MURAGUCHI Masahiro | NTT Electronics Corporation

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概要

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著作論文

Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
A Wide-Bandwidth-Output Direct Digital Synthesizer with Multiple Delay Generators
A Wide-Bandwidth-Output Direct Digital Synthesizer with Plural Delay Generators
A Novel Broad-Band MMIC VCO Using an Active Inductor (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
An MMIC Resonant-Tunneling HEMT Doubler
Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and
A High-Efficiency Linear Power Amplifier with a Novel Output Power Control Technique(Special Issue on Microwave and Millimeter-Wave Module Technology)
A Novel Optical Control Technique Using Tunable Inductance Circuits

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