Matsuzaki Hideaki | Ntt Photonics Laboratories

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概要

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著作論文

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
An MMIC Resonant-Tunneling HEMT Doubler
Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

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