High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
Otsuji Taiichi
Ntt Network Innovation Laboratories
-
Otsuji Taiichi
Ntt Optical Network Systems Laboratories
-
Yamamoto M
Ntt Electronics Technology Corporation
-
Yamamoto Masafumi
Ntt System Electronics Laboratories
-
Murata K
Ntt Photonics Laboratories
-
Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
-
MATSUZAKI Hideaki
NTT System Electronics Laboratories
-
OSAKA Jiro
NTT System Electronics Laboratories
-
ARAI Kunihiro
NTT System Electronics Laboratories
-
Osaka J
Ntt Photonics Lab. Atsugi Jpn
-
Murata K
Ntt Photonics Laboratories Ntt Corporation
-
Otsuji T
Kyushu Inst. Of Technol. Iizuka‐shi Jpn
-
Maezawa Koichi
Ntt System Electronics Laboratories
-
Matsuzaki Hideaki
Ntt Photonics Laboratories
関連論文
- 22pZF-5 極紫外FELによる原子・クラスター多重イオン化実験III. : クラスター多重イオン化のレーザー波長・レーザー強度依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 22pZF-4 極紫外FELによる原子・クラスター多重イオン化実験II. : クラスター多重イオン化のサイズ依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 22pZF-3 極紫外FELによる原子・クラスター多重イオン化実験I. : 反跳イオン運動量分光による高次光分布測定(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
- 軟X線多層膜鏡の形状誤差補正のための大面積イオン銃を用いたミリング装置の開発
- 超高精細バイオイメージング用波面補正軟X線多層膜ミラーの開発
- 傾斜エリプソメトリーによる3次元形状計測 (特集 偏光計測)
- 偏光利用による3次元リアルタイム計測法の開発
- 正反射による物体表面の傾斜エリプソメトリー : 精密実時間形状計測への基本概念
- X線ミラー多層膜 (特集欄 ナノテクノロジーにおけるものづくり) -- (真空中で作製するナノ構造)
- 軟X線多層膜光学
- 水晶振動子を用いたバイブロスキャニング法による非導電体の微細形状計測
- バイブロスキャニング法を用いた微細形状測定システムの開発
- 24aC2 偏光解析法による氷結晶粒界での疑似液体層の検出(結晶成長のその場観察II)
- 圧電センサを用いた共振型バイブロスキャン法の開発
- 軟X線多層膜と応用の現状(EUV基盤技術とその応用の現状)
- 31a-YM-6 Ni薄膜のM吸収端におけるファラデー効果
- バイブロスキャン微細穴形状測定装置の開発
- New Ellipsometric Approach to Critical Dimension Metrology Utilizing Form Birefringence Inherent in a Submicron Line-and-Space Pattern
- 5a-G-1 透過型多層膜を用いた軟X線偏光分光法 I
- 軟 X 線エリプソメトリー
- 軟X線ポラライザーの最前線
- 軟X線多層膜光学素子 -放射光科学への応用-
- 反射波面補正のためにイオンミリングした軟X線多層膜鏡の評価
- 軟X線顕微鏡用精密多層膜ミラーの開発
- 昭和 60 年度プラズマ研究所共同研究会「真空紫外・軟 X 線領域での測光機器較正法の研究」プログラム
- KrFエキシマレーザ露光装置用TTLアライメント系の開発
- 放電加工による微細穴加工および微細ポンチの成形(形状創成の高精度化)
- 軟 X 線用偏光子
- Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
- Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- A Multilayered Piezoelectric Transformer Operating in the Third Order Longitudinal Mode and Its Application for an Inverter
- High-Power Characteristics of Multilayer Piezoelectric Ceramic Transducers
- Small Multilayer Piezoelectric Transformers with High Power Density : Characteristics of Second and Third-Mode Rosen-Type Transformers
- Low-Frequency Sound Source with Dual Bending Radiation Surfaces
- Investigation of Disk Bender Low-Frequency Projector with Dual Radiation Surfaces
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- 軟X線用多層膜ミラーの設計・製作・評価(X線光学)
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Wavelength-Multiplexed Holographic Recording in Cerium Doped Strontium Barium Niobate by Using Tunable Laser Diode
- High-Density Optical Storage with Multiplexed Holographic Recording Method
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- The Primary Structure of Cassowary (Casuarius casuarius) Goose Type Lysozyme(Biochemistry & Molecular Biology)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Crosstalk-Suppressed Readout System Using Shading Band
- Three-Track Readout Method Using Two Offset Beams
- A Novel Functional Logic Circuit Using Resonant-Tunneling Devices for Multiple-Valued Logic Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- InP-based High-speed Transistors and Their IC Applications
- Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
- Purification and Characterization of Goose Type Lysozyme from Cassowary (Casuarlus casuarius) Egg White
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
- Temperature Dependence of the Phase Coherence Length of High-Mobility AlGaAs/GaAs Quantum-Wire Rings
- 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
- Compression of Electrical Pulses Using Traveling-Wave Field Effect Transistors
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes
- Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures
- A Traveling-wave Time-division Demultiplexer
- An Analytical Toggle Frequency Expression for Source-Coupled FET Logic(SCFL)Frequency Dividers
- A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop
- Characterization of Wave Propagation on Traveling-Wave Field Effect Transistors
- Conductance Oscillations in a Quantum Wire with a Stub Structure due to Quantum Interference
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- 軟X線用多層膜の形成とその利用
- 偏光解析法(エリプソメトリ-) (表面の評価技術) -- (表面状態評価法)
- 氷結晶表面における疑似液体層の存在と結晶のモルフォロジー : モルフォロジーIII
- 4a-I-8 偏光解析法による氷表面の疑似液体層の研究
- 偏光解析法による氷表面の疑似液体層の研究 : 厚さの温度依存性と方位依存性
- 回転素子型エリプソメ-タ-とその調整(最近の技術から)
- Tunneling Current through Si Donor Level in GaAs/AlAs Single-Barrier Diodes
- Characterization of Wave Propagation on Traveling-Wave Field Effect Transistors