OSAKA Jiro | NTT System Electronics Laboratories

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概要

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著作論文

31a-ZF-6 Spin-split subbands in an inverted InGaAs/InAlAs heterostructure
A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition

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