Yokoyama H | Electrotechnical Lab. Ibaraki Jpn
スポンサーリンク
概要
関連著者
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Yokoyama H
Electrotechnical Lab. Ibaraki Jpn
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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YOKOYAMA Haruki
Department of Electrical Engineering, Hiroshima University
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Ikari T
Miyazaki Univ. Miyazaki Jpn
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Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering University Of Miyazaki
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Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
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Futagami K
Kyushu Sangyo Univ. Fukuoka Jpn
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Futagami Koji
Department of Electronics, Miyazaki University
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Futagami Koji
Department Of Applied Physics Faculty Of Engineering Kyushu University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Yokoyama Hirosumi
Department of Electrical and Electronic Engineering, Miyazaki University
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Yokoyama Hirosumi
Department Of Electrical And Electronic Engineering Miyazaki University
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Okamoto Masaki
Department of Respiratory Medicine, Tenri Hospital
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Okamoto M
Osaka Univ. Osaka Jpn
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Okamoto Masaki
Department Of Applied And Bioapplied Chemistry Graduate School Of Engineering Osaka City University
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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Yamamoto M
Ntt Electronics Technology Corporation
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Yamamoto Masafumi
Ntt System Electronics Laboratories
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Murata K
Ntt Photonics Laboratories
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YOKOYAMA Haruki
NTT System Electronics Laboratories
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OSAKA Jiro
NTT System Electronics Laboratories
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Shinohara Masanori
Ntt Lsi Laboratories
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka J
Ntt Photonics Lab. Atsugi Jpn
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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Inoue Naohisa
Ntt Lsi Laboratories
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Okamoto M
Department Of Electrical Engineering Osaka University
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Shinohara M
Shimadzu Corporation
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TANIMOTO Masafumi
NTT LSI Laboratories
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YOKOYAMA Haruki
NTT LSI Laboratories
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Murata K
Ntt Photonics Laboratories Ntt Corporation
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
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Maezawa Koichi
Ntt System Electronics Laboratories
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Tanimoto M
Ntt Lsi Laboratories
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OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Matsuyama Hiroyuki
Department of Internal Medicine, Fujita Health University, School of Medicine
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FUJISAWA Masami
Synchrotron Radiation Laboratory, Institute of Solid Stale Physics, The University of Tokyo
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SHIGETOMI Shigeru
Department of Physics, Kurume University
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Fujisawa Masami
Synchrotron Radiation Laboratory Institute For Solid State Physics The University Of Tokyo
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Takahiro K
Tohoku University
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Takahiro Katsumi
Department Of Electrical Engineering Hiroshima University
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HIGASHI Kouji
Department of Electronics, Miyazaki University
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YAMASAKI Toshifumi
Department of Electrical Engineering, Hiroshima University
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IMURA Takeshi
Mitsubishi Paper Mills Ltd.
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Higashi Kouji
Department Of Electronics Miyazaki University
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Yamasaki Toshifumi
Department Of Electrical Engineering Hiroshima University
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Matsuyama H
Department Of Electronics Miyazaki University
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Matsuyama Hiroyuki
Department Of Biochemistry Fukuoka University School Of Medicine
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Shigetomi Shigeru
Department Of Physics Kurume University
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Takahiro Katsumi
Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
著作論文
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Photoacoustic Spectra of Si Wafers at Liquid Helium Temperature
- Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition