Inoue Naohisa | Ntt Lsi Laboratories
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概要
関連著者
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Inoue Naohisa
Ntt Lsi Laboratories
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Shinohara Masanori
Ntt Lsi Laboratories
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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Shinohara M
Shimadzu Corporation
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TANIMOTO Masafumi
NTT LSI Laboratories
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YOKOYAMA Haruki
NTT LSI Laboratories
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
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Tanimoto M
Ntt Lsi Laboratories
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Homma Y
Ntt Interdisciplinary Res. Lab. Tokyo Jpn
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HOMMA Yoshikazu
NTT Basic Research Laboratories
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HOMMA Yoshikazu
NTT Interdisciplinary Research Laboratories
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Osaka J
Ntt Photonics Lab. Atsugi Jpn
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Yokoyama H
Electrotechnical Lab. Ibaraki Jpn
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OSAKA Jiro
NTT LSI Laboratories
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Homma Yoshikazu
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Wada Kazumi
NTT LSI Laboratories
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Ikuta Kenji
Ntt Lsi Laboratories
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SUGIYAMA Hiroki
NTT LSI Laboratories
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Fushimi Hiroshi
Technological University Of Nagaoka
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KOZEN Atsuro
NTT Optoelectronics Laboratories
著作論文
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
- A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic Field : Semiconductors and Semiconductor Devices
- Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy