Wada Kazumi | NTT LSI Laboratories
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概要
関連著者
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Wada Kazumi
NTT LSI Laboratories
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和田 健司
大阪府立大学 大学院工学研究科
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Wada K
Osaka Prefecture University
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NAKANISHI Hideo
NTT LSI Laboratories
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Nakanishi H
Tohoku Univ. Sendai Jpn
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Tanigawa S
Institute Of Applied Physics University Of Tsukuba
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Nakanishi H
Department Of Electrical Engineering Science University Of Tokyo
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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WEI Long
Institute of Materials Science, University of Tsukuba
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Wei L
Institute Of Materials Science University Of Tsukuba
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Wei Long
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Kametani Hitoshi
General Research Laboratory Mitubishi Electric Corporation
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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KONDO Hitoshi
Institute of Materials Science,University of Tsukuba
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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Kondo H
The Institute Of Scientific And Industrial Research Osaka University
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kawano Takao
Radioisotope Center University Of Tsukuba
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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Kawano T
Osaka Univ. Osaka Jpn
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Kondo Hideyuki
Central Research Institute Mitsubishi Materials Corporation
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Wada K
Hokkaido Univ. Sapporo Jpn
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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MOTOHISA Junichi
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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KUMAKURA Kazuhide
Research Center for Interface Quantum Electronics, Hokkaido University
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Kishida Motoya
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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Yamazaki Takahiro
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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TABUKI Yasushi
Institute of Materials Science, University of Tsukuba
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Tabuki Yasushi
Institute Of Materials Science University Of Tsukuba
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Kondo H
Nikon Corp.
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Inoue Naohisa
Ntt Lsi Laboratories
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Kishida Motoya
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:(pr
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Fushimi Hiroshi
Technological University Of Nagaoka
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KOZEN Atsuro
NTT Optoelectronics Laboratories
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Motohisa Junichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Kumakura K
Ntt Basic Research Laboratories
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Kumakura Kazuhide
Research Center For Interface Quantum Electronics (rciqe) Hokkaido University:ntt Basic Research Lab
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Kondo Hitoshi
Institute Of Materials Science University Of Tsukuba
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Yamazaki Takahiro
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:dai
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
著作論文
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Vacancy-Type Defects in Be-Implanted InP
- Plasma-Induced Damage Behavior in GaAs by Photoreflectance Spectroscopy
- A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic Field : Semiconductors and Semiconductor Devices