FUKUI Takashi | Research Center for Interface Quantum Electronics, Hokkaido University

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概要

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著作論文

Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
III-V semiconductor hetero-structure nanowires by selective area MOVPE
In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
Theoretical study on the photonic crystal slabs with hexagonal optical atoms
Investigation of Optical Magnetic Flux Generation in Superconductive YBCO Strip-Line(Special Issue on Superconductive Electronics)
Terahertz Ultrasonic Generation and Detection in GaAs/AlGaAs Quantum Wells

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