III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
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概要
- 論文の詳細を見る
III-V semiconductor nanowires were grown by selective area metalorganic vapor phase epitaxy on (111) oriented substrate. Here, we discus uniform growth of nanowire array and their optical transport device applications.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
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Motohisa Junichi
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Motohisa Junichi
Hokkaido Univ. Sapporo Jpn
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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HIRUMA Kenji
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele
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HARA Shinjiro
Research Center for Integrated Quantum Electronics, Hokkaido University
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Hara Shinjiro
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
関連論文
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- 21pTG-6 InP/InAs/InPコアマルチシェル型ナノワイヤの励起子過程(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
- 18pTA-5 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトルII(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
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- CT-2-4 InAs系ナノワイヤトランジスタ(CT-2.ポストCMOSデバイス技術?-III-V MOS,ナノワイヤデバイス,グラフェンデバイス-,チュートリアルセッション,ソサイエティ企画)
- MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成
- 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
- 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
- Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
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- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
- Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
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- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
- Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
- Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
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- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Theoretical study on the photonic crystal slabs with hexagonal optical atoms
- Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
- Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces (Special issue: Solid state devices and materials)
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- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
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