GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Nataraj Devaraj
Research Center For Integrated Quantum Electronics Hokkaido University
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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MOTOHISA Junichi
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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OOIKE Noboru
Research Center for Integrated Quantum Electronics, Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Ooike Noboru
Research Center For Integrated Quantum Electronics Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics Hokkaido University
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Motohisa Junichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Motohisa Junichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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