GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits

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概要

• 論文の詳細を見る

• GaAs single electron transistors (SETs) are successfully fabricated using selectively grown GaAs/AlGaAs modulation doped structures by metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. SET shows clear Coulomb oscillations and Coulomb gaps modulated by gate voltage. GaAs single electron tunneling inverter circuits having a SET and a variable load resistance are also formed. The operation of a resistance-load inverter circuit is confirmed at 1.9 K from the transport properties of this SET and input-output characteristics.

• 社団法人応用物理学会の論文
• 1999-01-30

著者

• NAKAJIMA Fumito

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• Motohisa Junichi

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Kumakura Kazuhide

  Research Center For Interface Quantum Electronics (rciqe) Hokkaido University:ntt Basic Research Lab

• FUKUI Takasi

  Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University

• Fukui Takasi

  Research Center For Interface Quantum Electronics (rciqe) Hokkaido University

• Motohisa Junichi

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan

関連論文

• Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
• Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
• Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
• III-V semiconductor hetero-structure nanowires by selective area MOVPE
• GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
• MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
• Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
• Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
• Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
• Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
• Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
• Theoretical study on the photonic crystal slabs with hexagonal optical atoms
• Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
• Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
• Novel Nano-Faceting Structures Grown on Patterned Vicinal(110)GaAs Substrates by Metal-Organic Vapor Phase Epitaxy(MOVPE)
• GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
• Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids
• Aharonov–Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes

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