Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
スポンサーリンク
概要
- 論文の詳細を見る
The standard plane wave expansion (PWE) method with the supercell method was used to calculate the band diagrams of photonic crystal slabs (PCSs) with hexagonal optical atoms. A hole-type PCS with hexagonal optical atoms has almost the same width of first band gap for the TE-like mode as its two-dimensional (2D) counterpart. However, the first band gap of a pillar-type PCS with hexagonal optical atoms shrinks considerably compared with that of its 2D counterpart. The hole-type PCS with normal hexagonal optical atoms has a slightly wider first band gap for TE-like modes than does that with orthogonal hexagonal optical atoms. PCSs with normal and orthogonal hexagonal optical atoms have band gaps that can be compared to those of PCSs with circular optical atoms. Hence they are appropriate structures for fabricating PC devices. The dispersion curves of line-defect PC waveguides were also calculated by the PWE method with the supercell method and several potential methods for modulating their dispersion curves were also discussed. Modulating the width of the line defect and the size of the optical atoms along the line defect were proved to be effective ways for obtaining a single-mode line-defect PC waveguide with a large bandwidth.
- 2005-04-15
著者
-
Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Yang Lin
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
-
Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan
-
Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
-
Fukui Takashi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan
関連論文
- Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
- Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
- Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
- Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Theoretical study on the photonic crystal slabs with hexagonal optical atoms
- Investigation of Optical Magnetic Flux Generation in Superconductive YBCO Strip-Line(Special Issue on Superconductive Electronics)
- Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
- Novel Nano-Faceting Structures Grown on Patterned Vicinal(110)GaAs Substrates by Metal-Organic Vapor Phase Epitaxy(MOVPE)
- GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
- Terahertz Ultrasonic Generation and Detection in GaAs/AlGaAs Quantum Wells
- Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids
- Growth Direction Control of Ferromagnetic MnAs Grown by Selective-Area Metal–Organic Vapor Phase Epitaxy
- Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices
- Aharonov–Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes