Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
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概要
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We report on a promising approach for the formation of compound semiconductor two-dimensional photonic crystal slabs utilizing selective-area metal–organic vapor phase epitaxy (SA-MOVPE). The selective-area growth process for the submicron-sized air holes of InP-based semiconductors was investigated on InP(111)A and (111)B substrates with a periodic array of hexagonal SiO2 masks. By optimizing growth conditions, a highly uniform array of hexagonal air holes in InP and InGaAs with a 500 nm pitch was formed on (111)B substrates. We also fabricated air-hole arrays with InP/InGaAs/InP double heterostructures on InP(111)B, and confirmed photoluminescence from an InGaAs quantum well at low temperatures.
- 2008-05-25
著者
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Hara Shinjiro
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Motohisa Junichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hashimoto Shinji
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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Takeda Junichiro
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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Tarumi Akihiro
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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