Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-03-25

著者

• Motohisa Junichi

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Motohisa Junichi

  Hokkaido Univ. Sapporo Jpn

• Goto Hajime

  Fundamental Technology Research Center Honda R&d Co. Ltd.

• NOSAKI Katsutoshi

  Fundamental Technology Research Center, Honda R&D Co., Ltd.

• TOMIOKA Katsuhiro

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele

• HARA Shinjiro

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele

• HIRUMA Kenji

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele

• FUKUI Takashi

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele

• Hara Shinjiro

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Fukui Takashi

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Tomioka Katsuhiro

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Nosaki Katsutoshi

  Fundamental Technology Research Center Honda R&d Co. Ltd.

関連論文

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• Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
• 25pWJ-7 InP/InAs/InPコアマルチシェル型ナノワイヤにおける光励起キャリアの過渡現象(量子井戸・超格子ほか,領域4,半導体,メゾスコピック系・局在)
• 21pTG-6 InP/InAs/InPコアマルチシェル型ナノワイヤの励起子過程(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
• 18pTA-5 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトルII(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
• 24aXL-7 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトル(24aXL 量子井戸・超格子,領域4(半導体,メゾスコピック系・局在))
• CT-2-4 InAs系ナノワイヤトランジスタ(CT-2.ポストCMOSデバイス技術?-III-V MOS,ナノワイヤデバイス,グラフェンデバイス-,チュートリアルセッション,ソサイエティ企画)
• MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成
• 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
• 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
• Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
• Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
• Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
• Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
• Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
• Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
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• III-V族化合物半導体ナノワイヤにおける閃亜鉛鉱構造とウルツ鉱構造の構造相転移(安定・準安定:閃亜鉛鉱構造とウルツ鉱構造)
• Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
• III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
• III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
• III-V semiconductor hetero-structure nanowires by selective area MOVPE
• In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
• In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
• Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
• Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
• GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
• Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
• Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
• MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
• Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
• Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
• Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
• Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
• Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
• Theoretical study on the photonic crystal slabs with hexagonal optical atoms
• Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
• Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces (Special issue: Solid state devices and materials)
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• Aharonov–Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes
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• Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
• Indium Phosphide Core--Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer
• Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer
• Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
• Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy
• Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer
• Selective-Area Growth of InAs Nanowires with Metal/Dieiectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors

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