III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)

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概要

• 論文の詳細を見る

• III-V semiconductor nanowires were grown by selective area metalorganic vapor phase epitaxy on (111) oriented substrate. Here, we discus uniform growth of nanowire array and their optical transport device applications.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• Motohisa Junichi

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Motohisa Junichi

  Hokkaido Univ. Sapporo Jpn

• FUKUI Takashi

  Research Center for Interface Quantum Electronics, Hokkaido University

• HIRUMA Kenji

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele

• HARA Shinjiro

  Research Center for Integrated Quantum Electronics, Hokkaido University

• Hara Shinjiro

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Fukui Takashi

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

関連論文

• One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires
• Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
• 25pWJ-7 InP/InAs/InPコアマルチシェル型ナノワイヤにおける光励起キャリアの過渡現象(量子井戸・超格子ほか,領域4,半導体,メゾスコピック系・局在)
• 21pTG-6 InP/InAs/InPコアマルチシェル型ナノワイヤの励起子過程(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
• 18pTA-5 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトルII(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
• 24aXL-7 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトル(24aXL 量子井戸・超格子,領域4(半導体,メゾスコピック系・局在))
• CT-2-4 InAs系ナノワイヤトランジスタ(CT-2.ポストCMOSデバイス技術?-III-V MOS,ナノワイヤデバイス,グラフェンデバイス-,チュートリアルセッション,ソサイエティ企画)
• MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成
• 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
• 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価(機能ナノデバイスとおよび関連技術)
• Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
• Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
• Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
• Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
• Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
• Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
• 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移(機能ナノデバイス及び関連技術)
• 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移(機能ナノデバイス及び関連技術)
• III-V族化合物半導体ナノワイヤにおける閃亜鉛鉱構造とウルツ鉱構造の構造相転移(安定・準安定:閃亜鉛鉱構造とウルツ鉱構造)
• Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
• Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
• III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
• III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
• III-V semiconductor hetero-structure nanowires by selective area MOVPE
• In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
• In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
• Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
• Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
• GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
• Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
• Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
• MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
• Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
• Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
• Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
• Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
• Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
• Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
• Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
• A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
• Theoretical study on the photonic crystal slabs with hexagonal optical atoms
• Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
• Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces (Special issue: Solid state devices and materials)
• Investigation of Optical Magnetic Flux Generation in Superconductive YBCO Strip-Line(Special Issue on Superconductive Electronics)
• Terahertz Ultrasonic Generation and Detection in GaAs/AlGaAs Quantum Wells
• Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy
• Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
• Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
• Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
• Novel Nano-Faceting Structures Grown on Patterned Vicinal(110)GaAs Substrates by Metal-Organic Vapor Phase Epitaxy(MOVPE)
• Terahertz Ultrasonic Generation and Detection in GaAs/AlGaAs Quantum Wells
• Fabrication and Characterization of InP Nanowire Light-Emitting Diodes (Special Issue : Solid State Devices and Materials (1))
• One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
• Light Absorption in Semiconductor Nanowire Arrays with Multijunction Cell Structures (Special Issue : Applied Physics on Materials Research)
• Fast bilateral filtering using recursive moving sum
• Metal–Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs Nanocluster Formation on GaInAs (111)A Surfaces
• Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids
• Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy
• Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy
• Growth Direction Control of Ferromagnetic MnAs Grown by Selective-Area Metal–Organic Vapor Phase Epitaxy
• Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices
• Drain-Current Deep Level Transient Spectroscopy Study of Carrier Emission Process from InAs Quantum Dots in GaAs Narrow-Wire Field Effect Transistors
• Aharonov–Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes
• Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
• Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
• Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy
• Selective-Area Growth of InAs Nanowires with Metal/Dieiectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors

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