Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids
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概要
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In this paper, we present the results of polarization-dependent micro-photoluminescence ($\mu$-PL) measurements of InAs quantum dots (QDs) selectively formed on GaAs pyramidal structures by selective area metalorganic vapor phase epitaxy. Under nonresonant excitation, strong optical anisotropy is observed in the PL spectra of the InAs QDs. Under near-resonant excitation, where the excitation energy is close to the wetting layer luminescence, the linear polarization degree of InAs QD is larger than that observed under nonresonant excitation. When excited and detected lights have the same polarization along two $\langle 110\rangle$ directions, the PL is intense. However, in the cross polarization configurations, the PL intensities are very weak. The observed strong optical anisotropy in InAs QDs formed on GaAs pyramids under nonresonant excitation can be attributed mainly to the asymmetry of the QD potential which results from the anisotropic strain relaxation and shape of QDs, while that under the near-resonant excitation is explained by the hot photoluminescence effect.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Motohisa Junichi
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan
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Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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An Haiyan
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan
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Fukui Takashi
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan
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