Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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Kishida Motoya
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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GOTO Shu
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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ISHIZAKI Jun-ya
Research Center for Interface Quantum Electronics, Hokkaido University
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Goto S
Central Research Laboratory Hitachi Ltd.
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Kishida Motoya
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:(pr
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Ishizaki Jun-ya
Research Center For Interface Quantum Electronics Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Goto Shu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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