Ishizaki Jun-ya | Research Center For Interface Quantum Electronics Hokkaido University
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概要
- ISHIZAKI Jun-yaの詳細を見る
- 同名の論文著者
- Research Center For Interface Quantum Electronics Hokkaido Universityの論文著者
関連著者
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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Ishizaki Jun-ya
Research Center For Interface Quantum Electronics Hokkaido University
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ISHIZAKI Jun-ya
Research Center for Interface Quantum Electronics, Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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HARA Shinjiroh
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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MOTOHISA Junichi
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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GOTO Shu
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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AKABORI Masashi
Research Center for Interface Quantum Electronics, Hokkaido University
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IRISAWA Tomoki
Research Center for Interface Quantum Electronics, Hokkaido University
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Goto S
Central Research Laboratory Hitachi Ltd.
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Hara Shinjiroh
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Hara S
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Ohkuri Kazunobu
Research Center For Interface Quantum Electronics Hokkaido University
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Motohisa Junichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Motohisa Junichi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan
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Goto Shu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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福井 孝志
北海道大学情報科学研究科および量子集積エレクトロニクス研究センター
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Kishida Motoya
Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University
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ISHIZAKI Jun-ya
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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FUKUI Takashi
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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OHKURI Kazunobu
Research Center for Interface Quantum Electronics, Hokkaido University
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Kishida Motoya
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:(pr
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Igarashi T
Univ. Tokyo Tokyo Jpn
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Fukui Takashi
Department Of Applied Physics Faculty Of Engineering Osaka University:(present Address)fuji Photo Fi
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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MOTOHISA Junichi
Research Center for Interface Quantum Electronics, Hokkaido University
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HARA Shinjiroh
Research Center for Interface Quantum Electronics, Hokkaido University
著作論文
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy