Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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GOTO Shu
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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ISHIZAKI Jun-ya
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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FUKUI Takashi
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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ISHIZAKI Jun-ya
Research Center for Interface Quantum Electronics, Hokkaido University
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Goto S
Central Research Laboratory Hitachi Ltd.
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Ishizaki Jun-ya
Research Center For Interface Quantum Electronics Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Fukui Takashi
Department Of Applied Physics Faculty Of Engineering Osaka University:(present Address)fuji Photo Fi
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Goto Shu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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