Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy

概要

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The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of <-1 1 0>- and <-1 -1 2>-orientated QWRs were grown on (001) and (111)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions.
Elsevierの論文
2004-07-15