Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
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概要
- 論文の詳細を見る
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The analysis on transient currents for the air-exposed and H2-plasma-treated devices showed that N-vacancy-related near-surface traps play an important role in current collapse in AlGaN/GaN HFETs. An Al2O3-based surface passivation scheme including an N2-plasma surface treatment was proposed and applied to an insulated-gate HFET. A large conduction-band offset of 2.1 eV was achieved at the Al2O3/Al0.3Ga0.7N interface. No current collapse was observed in the fabricated Al2O3 insulated-gate HFETs under both drain stress and gate stress.
- American Institute of Physicsの論文
- 2003-10-06
著者
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Ootomo Shinya
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ootomo Shin-ya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
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Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
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Hasegawa Hideki
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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