Ootomo Shin-ya | Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
スポンサーリンク
概要
- Ootomo Shinyaの詳細を見る
- 同名の論文著者
- Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And Inの論文著者
関連著者
-
Ootomo Shinya
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
-
Ootomo Shin-ya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
-
長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
-
HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Hasegawa Hideki
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
-
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
-
Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
-
Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
-
NAKASAKI Ryuusuke
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
-
OYAMA Susumu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
-
Nakasaki R
Hokkaido Univ. Sapporo Jpn
著作論文
- Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
- Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
- Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
- Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- Mechanism of current leakage through metal/n-GaN interfaces