Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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概要
- 論文の詳細を見る
Surface passivation process of GaN utilizing electron-cyclotron-resonance (ECR) excited plasma has been characterized and optimized for realization of stable operation in GaN-based high-power/high-frequency electronic devices. From XPS analysis, the NH_4OH treatment as well as the ECR-N_2 and ECR-H_2 plasma treatments were found to be effective in removing natural oxide and contaminants from the GaN surface. The SiN_χ/GaN structure prepared by the ECR excited plasma chemical vapor deposition(ECR-CVD)process showed better C-V behavior compared to the SiO_2/GaN structure. Suface treatment process using the ECR plasma improved interface properties and achieved the D_<it> value of 2×10^<11>cm^<-2>eV^<-1> or less. An estimate of the valence band offset by XPS showed that the present SiN_χ/n-GaN structure has a type-I band lineup, suitable for the surface passivation of GaN-based devices. No pronounced stress remained at the SiN_χ/GaN interface, which was confirmed by Raman spectroscopy.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ootomo Shinya
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ootomo Shin-ya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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NAKASAKI Ryuusuke
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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OYAMA Susumu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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Nakasaki R
Hokkaido Univ. Sapporo Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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