A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sakai T
Tokyo Inst. Technol. Kanagawa Jpn
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Sakai Tomohiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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YOSHIDA Toshiyuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Sakai T
Dainippon Screen Manufacturing Co. Ltd. Kyoto Jpn
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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SAKAI Takamasa
Dainippon Screen Manufacturing Co., Ltd.
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Sakai T
Laboratory Of Plant Cell Biochemistry Department Of Applied Plant Science Division Of Life Science G
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Sakai Toshikatsu
School Of Science And Engineering Waseda University:crest Japan Science And Technology Corporation (
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Hasagawa Hideki
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University
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