Control of Order Parameter during Growth of In_<0.5>Ga_<0.5>P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume T
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ishikawa Fumitaro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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KAKUMU Takaaki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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