DLTS, PL and CL Study of Dominant Deep Level and Its Removal in InGaP/GaAs Heterostructure Grown by TBP-Based GSMBE
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ishikawa Fumitaro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Fumitaro
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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HIRAMA Atsushi
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Hirama Atsushi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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