In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAWADA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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NUMATA Kei-ich
(Present address) Microelectronics Research Laboratories, NEC Corporation
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TOHDOH Susumu
Research Center for Interface Quantum Electronics, Hokkaido University
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Tohdoh Susumu
Research Center For Interface Quantum Electronics Hokkaido University
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Numata Kei-ich
(present Address) Microelectronics Research Laboratories Nec Corporation
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Sawada Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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