Saitoh Toshiya | Research Center For Interface Quantum Electronics Hokkaido University
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関連著者
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAWADA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University
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Sawada Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Takeuchi Hayato
Research Center For Interface Quantum Electronics Hokkaido University
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TANIMURA Arata
Research and Development Dept., Hokkaido Electric Power Co., Inc.
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TAKEUCHI Hayato
Research Center for Interface Quantum Electronics, Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryouji
Research Center For Interface Quantum Electronics Hokkaido University
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NUMATA Kei-ich
(Present address) Microelectronics Research Laboratories, NEC Corporation
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TOHDOH Susumu
Research Center for Interface Quantum Electronics, Hokkaido University
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NISHIMOTO Youichiro
Department of Electrical Engineering, Hokkaido University
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KOIZUMI Ryoji
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi R
Research Center For Interface Quantum Electronics Hokkaido University
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Koizumi Ryoji
Research Center For Interface Quantum Electronics Hokkaido University
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Tohdoh Susumu
Research Center For Interface Quantum Electronics Hokkaido University
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Numata Kei-ich
(present Address) Microelectronics Research Laboratories Nec Corporation
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Tanimura Arata
Research Center For Interface Quantum Electronics Hokkaido University
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Nishimoto Youichiro
Department Of Electrical Engineering Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060, Japan
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Saitoh Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060, Japan
著作論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE